| PART |
Description |
Maker |
| CFB949AQ CFD1275AQ CFB949AP CFD1275AP CFD1275R CFB |
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AQ
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949AQ
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275AP
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFB949AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 2500 hFE. Complementary CFB949R
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 4000 - 10000 hFE. Complementary CFD1275P
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFD1275AR
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFD1275A
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 1000 - 10000 hFE. Complementary CFB949
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 2.000A Ic, 2000 - 5000 hFE. Complementary CFB949Q
|
Continental Device India Limited
|
| TB-874-HAR-1 TB-871-HARD-2 TB-872-HARD-2 TB-872-HA |
5000 MHz - 10000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.5 dB INSERTION LOSS
2000 MHz - 18000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 4.1 dB INSERTION LOSS
5000 MHz - 10000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.6 dB INSERTION LOSS
5000 MHz - 10000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.4 dB INSERTION LOSS
5000 MHz - 10000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 2.7 dB INSERTION LOSS
2000 MHz - 18000 MHz RF/MICROWAVE SGL POLE EIGHT THROW SWITCH, 3.9 dB INSERTION LOSS
|
Crane Connectors
|
| HER204 HER201 HER208 HER202 HER203 HER205 HER206 H |
10000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
2.0 AMPS.HIGH EFFICIENCY RECTIFIERS
|
娴???洪??靛??ㄤ欢??????
JGD[Jinan Gude Electronic Device]
|
| BYX103G BYX101 BYX101G BYX102G BYX104G BYX103GT/R |
0.31 A, 10000 V, SILICON, SIGNAL DIODE HERMETIC SEALED, GLASS PACKAGE-2
High-voltage soft-recovery controlled avalanche rectifiers
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| SEN-R-1050-010 SEN-R-1050-026 SEN-R-1050-027 SEN-R |
TRANSIENT VOLTAGE SUPPRESSOR 5000 WATT SERIES GLASS PASSIVATED DIE/CELL 5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
Sensitron Semiconductor
|
| 1N6519 1N6513 1N6515 1N6517 |
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time
2000 V - 10000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time
|
ETC[ETC]
|
| 3495H-642 3491H-644 |
5000 MHz - 10000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 2.6 dB INSERTION LOSS-MAX
1000 MHz - 2000 MHz RF/MICROWAVE VARIABLE ATTENUATOR, 1.6 dB INSERTION LOSS-MAX
|
HERLEY NEW YORK
|
| 5KP7.0A 5KP6.0A 5KP8.0A 5KP6.5CA 5KP9.0CA 5KP8.0CA |
Silicon Avalanche Diodes - 5000 Watt Axial Leaded Transient Voltage Suppressor 硅雪崩二极管- 5000瓦特轴向引线型瞬态电压抑制器
DIODE FAST REC 400V 20A DO-5 硅雪崩二极管- 5000瓦特轴向引线型瞬态电压抑制器
5000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
Littelfuse, Inc.
Surge Components, Inc.
|
| NE529F NE529H |
COMPARATOR, 10000 uV OFFSET-MAX, CDIP14
COMPARATOR, 10000 uV OFFSET-MAX, MBCY10
|
NXP SEMICONDUCTORS
|
| SP4-2512/883 SP2-2512/883 SP4-2510-2 SP3-2512-2 SP |
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20 CERAMIC, LCC-20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, MBCY8 METAL CAN-8
OP-AMP, 8000 uV OFFSET-MAX, 12 MHz BAND WIDTH, CQCC20
OP-AMP, 10000 uV OFFSET-MAX, 12 MHz BAND WIDTH, PDIP8
|
Ecliptek, Corp.
|
|
