PART |
Description |
Maker |
SLD-1083CZ |
4 Watt Discrete LDMOS FET in Ceramic Package
|
sirenza.com SIRENZA MICRODEVICES
|
0809LD60 |
60 Watt / 28V / 1 Ghz LDMOS FET 60 WATT 28V 1 GHz LDMOS FET 60 WATT, 28V, 1 GHz LDMOS FET
|
GHZ Technology ETC[ETC] List of Unclassifed Manufacturers
|
2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC] NEC Corp.
|
1.5KE100CA 1.5KE110CA 1.5KE120CA 1.5KE130CA 1.5KE1 |
Discrete POWER & Signal Technologies UHV240-KH/AS PTSA 0.5/ 9-2.5-Z Discrete POWER & Signal Technologies 分立功率 1500 Watt Transient Voltage Suppressors(功500瓦的瞬变电压抑制 1500瓦特瞬态电压抑制器(功500瓦的瞬变电压抑制器) 1500 Watt Transient Voltage Suppressors(???500???????靛?????? Glass passivated junction. 1500W Peak Pulse Power capability at 1.0 ms.
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp. http://
|
NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
NE5520379A |
3.2V Operation Silicon RF Power LDMOS FET
|
NEC
|
PTFB181702FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTAB182002FCV1R0 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXAC180602MD-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|