| PART |
Description |
Maker |
| SLD-2000 |
12 Watt Discrete LDMOS FET-Bare Die
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| SLD-3091FZ |
30 Watt Discrete LDMOS FET in Ceramic Flanged Package
|
sirenza.com
SIRENZA[SIRENZA MICRODEVICES]
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| 0809LD60P |
Compant High-Insulation Power Relay, Polarized, 10A 60瓦，28V的，1 GHz的LDMOS的场效应
60 Watt / 28V / 1 Ghz LDMOS FET
60 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| SLD2083CZ |
10 Watt high performance LDMOS transistor designed for operation to 2700MHz
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| TGF2023-05 |
25 Watt Discrete Power GaNon SiCHEMT
|
TriQuint Semiconductor
|
| TGF2954-15 |
27 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-10 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| W98M964001EUX W98M9640 |
Semiconductor Discrete Device, P-Channel Power MOS Field Effect Transistor
|
List of Unclassifed Manufacturers
ETC[ETC]
|
