| PART |
Description |
Maker |
| MAX4473 MAX4473ESA MAX4473EUA |
Low-Cost / Low-Voltage / PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin レMAX
Low-Cost Low-Voltage PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin μMAX
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| RF2173_06 RF2173 RF2173PCBA-41X RF217306 |
3V GSM POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
| RF5110G07 RF5110GTR7 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| CGY2013G CGY2013GC1 |
GSM 4 W power amplifier
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PBL40305 |
Multiband GSM Power Amplifier
|
ERICSSON[Ericsson]
|
| MRF18030A |
MRF18030AR3, MRF18030ASR3 GSM/GSM EDGE 1.8 - 1.88 GHz, 30 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6155 AWT6155RM37P8 AWT6155RM37P9 |
Quad-band GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| AWT6168R |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS
|
| MRF18085AR3 MRF18085ALSR3 |
RF Power Field Effect Transistors
GSM/GSM EDGE 1.80–1.88 GHz, 85 W, 26 V Lateral N–Channel RF Power MOSFET
|
Motorola, Inc.
MOTOROLA[Motorola Inc]
Freescale (Motorola)
|
| PF01411 PF01411A |
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
HITACHI[Hitachi Semiconductor]
|
