PART |
Description |
Maker |
NX7563JB-BC-AZ NX7563JB-BC |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
CEL[California Eastern Labs]
|
NDL7553P_00 NDL7553P NDL7553P1 NDL7553P1C NDL7553P |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE FOR 1550 nm OTDR APPLICATION
|
NEC[NEC]
|
NDL7502P NDL7503P NDL7503P1 NDL7503P1C NDL7503PC N |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块 1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NDL7001 NDL7001L NDL7401P NDL7401P1 NDL7401P1C NDL |
1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER 1 310纳米InGaAsP的应变量子阱的DC -异质结半导体激光器同轴模块与单模光
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NX7529BB-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
|
http:// California Eastern Laboratories
|
NX7529BB-AA-AZ NX7529BB-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (20 mW MIN)
|
CEL[California Eastern Labs]
|
NX7526BF-AA |
NECs 1550 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (95 mW MIN)
|
California Eastern Laboratories http://
|
NX7327BF-AA-AZ NX7327BF-AA |
NECs 1310 nm InGaAsP MQW FP PULSED LASER DIODE IN COAXIAL PACKAGE FOR OTDR APPLICATION (110 mW MIN)
|
CEL[California Eastern Labs]
|
NX7661JB-BC-AZ |
NECs 1625 nm InGaAsP MQW FP PULSED LASER DIODE IN DIP PACKAGE FOR OTDR APPLICATION (120 mW MIN) 邻舍1625纳米InGaAsP多量子阱计划生育脉冲激光二极管应用浸时域反射计20毫瓦最小包装)
|
California Eastern Laboratories, Inc.
|
NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs] http://
|
NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ). InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
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