| PART |
Description |
Maker |
| NX8300CE-CC NX8300BE-CC NX8300BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| NDL7564P NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?碌F Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?掳C to 85?掳C
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| KLT231544 |
1310nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| NX5504_06 NX5504 NX5504EH-AZ NX5504EK-AZ NX550406 |
1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| KLT-255444 |
1550nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
|
KODENSHI KOREA CORP.
|
| ML976H10 ML9XX10 |
InGaAsP - MQW - HIGH POWER LASER DIODES
InGaAsP-MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| KLT-249414 |
1490nm InGaAsP strained MQW DFB LD for 1.25G TO CAN
|
KODENSHI KOREA CORP.
|
| KLT-131452 |
1310nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
| NX8510UD NX8510UD-AZ |
NECs InGaAsP MQW-DFB TOSA FOR 2.5 Gb/s CWDM APPLICATIONS
|
California Eastern Laboratories
|
