| PART |
Description |
Maker |
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| CFA0103 CFA010306 CFA0103-L1 |
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
Low Noise GaAs FETs
|
MIMIX BROADBAND INC
|
| NJG1142KA1 |
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NJG1146KG1 |
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-1 |
HiRel K-Band GaAs Super Low Noise HEMT
|
INFINEON[Infineon Technologies AG]
|
| NJG1145UA2 |
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NJG1134HA8 |
UHF BAND LOW NOISE AMPLIFIER GaAs MMIC
|
New Japan Radio
|
| NE67383 NE67300 |
LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
|
NEC[NEC]
|
| NE3513M04-T2B-A |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
California Eastern Labs
|
| NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
