| PART |
Description |
Maker |
| NE434S01 NE434S01-T1B NE434S01-T1 |
C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE425S01 NE425S01-T1 NE425S01-T1B |
C TO KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
NEC[NEC]
|
| NE3511S02-T1C |
X TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
Renesas Electronics Corporation
|
| NE429M01 NE429M01-T1 |
C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
NEC Corp.
|
| NE3514S02-T1C NE3514S02-T1C-A NE3514S02-T1D-A |
K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
|
California Eastern Laboratories
|
| NE32400 NE24200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| NE32500N NE32500 NE32500M |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
|
CEL[California Eastern Labs]
|
| NE32500 NE27200 |
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
|
NEC[NEC]
|
| NE3503M04-T2-A NE3503M04-A |
PC 3C 3#16 PIN RECP
NECs C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER N-CHANNER HJ-FET 邻舍C至超级Ku波段低噪声和高增益放大器 - CHANNER黄建忠场效应
|
California Eastern Laboratories, Inc.
|
| M5238AFP M5238AL M5238AP M5238P M5238FP |
DUAL LOW-NOISE J-FET INPUT OPERATIONAL AMPLIFIERS 双路低噪声J - FET输入运算放大
DUAL LOW NOISE JFET INPUT OPERATIONAL AMPLIFIERS
CRYSTAL 30.000 MHZ 10PF SMD 双低噪声JFET输入运算放大
Dual Low Noise J-Fet Input Operational Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET)
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管（2-18 GHz的低噪声砷化镓场效应管）
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
