| PART |
Description |
Maker |
| NDL7540PA NX8561JD NX7460LE NX7460LE-BA NX7460LE-C |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 1 480纳米掺铒光纤放大器的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE 掺铒光纤放大 480纳米的应用InGaAsP的应变量子阱的DC -异质结激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-131451S |
1310nm InGaAsP strained MQW for FP-LD 1.5mm ball lens TO CAN
|
KODENSHI KOREA CORP.
|
| NDL7910P NX8562LB |
1 480 nm EDFA APPLICATION InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
|
NEC
|
| NX8300CE-CC NX8300BE-CC NX8300BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| NDL7565P1 NDL7103 NDL7113 NDL7153 NDL7163 NDL7502P |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1550nm OTDR APPLICATION
|
NEC[NEC]
|
| NX6307SK |
1310 nm InGaAsP MQW DFB laser diode for 2.5 Gb/s application.
|
NEC
|
| NX5306EHNX5306EK NX5306EK NX5306 NECCORP.-NX5306 |
NEC 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE
|
NEC Corp.
NEC[NEC]
|
| NX8312UD-AZ NX8312UD |
NECs 1310 nm InGaAsP MQW DFB TOSA FOR SHORT HAUL 2.5 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
| NX6306GK NX6306SK |
1310 nm InGaAsP MQW DFB laser diode for 155 Mb/s and 622 Mb/s applications.
|
NEC
|
| NX5313 |
1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS
|
California Eastern Laboratories
|
| NX6306 NX6306SK NX6306SH NX6306GH NX6306GK |
1310 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR 155 Mb/s and 622 Mb/s APPLICATIONS
|
California Eastern Labs
|
| NX7304CG-CC |
1310 nm InGaAsP MQW FP LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
California Eastern Laboratories
|
