| PART |
Description |
Maker |
| EC2600TTS-110.000M |
OSCILLATORS 100PPM -10 70 3.3V 4 110.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 110 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| T0980 T0980-TJQ T0980-TJS |
SiGe Transmit/ Receive Frontend IC
Sige Transmit/receive Front-end ic
|
ATMEL Corporation
|
| MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MA |
Adjustable.High-Linearity.SiGe.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs 可调、高线性度、SiGe、双频段、LNA/混频器IC
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| ADCMP582BCP ADCMP580 ADCMP580BCP ADCMP581 ADCMP581 |
Ultrafast SiGe Voltage Comparator w/CML Output Drivers
Ultrafast SiGe Voltage Comparator w/Reduced Swing NECL Output Drivers
|
AD[Analog Devices]
|
| NBSG86A NBSG86AMNR2 NBSG86AMN NBSG86ABAR2 NBSG86AB |
2.5V/3.3V SiGe Differential Smart Gate with Output Level Select
2.5V/3.3VSiGe Differential Smart Gate with Output Level Select
Evaluation Board Manual
|
ONSEMI[ON Semiconductor]
|
| DSI17-06A DS80-04F DS80-12F DS80-16F DSI75-14A DSI |
25 A, 600 V, SILICON, RECTIFIER DIODE
110 A, 400 V, SILICON, RECTIFIER DIODE
110 A, 1200 V, SILICON, RECTIFIER DIODE
110 A, 1600 V, SILICON, RECTIFIER DIODE
100 A, 1400 V, SILICON, RECTIFIER DIODE
52 A, 1600 V, SILICON, RECTIFIER DIODE
|
IXYS CORP
|
| STF120NF10 STP120NF10 STW120NF10 STB120NF10 STB120 |
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-247 package
N-channel 100 V, 0.009 Ω, 110 A STripFET?/a> II Power MOSFET in TO-247, TO-220, D2PAK, TO-220FP
N-channel 100 V, 0.009 ohm, 110 A STripFET II Power MOSFET
|
ST Microelectronics
STMicroelectronics
|
| MSG36E41 |
SiGe HBT type
|
Panasonic Semiconductor
|
| THN6601B |
NPN SiGe RF TRANSISTOR
|
TACHYONICS[Tachyonics CO,. LTD]
|
| THN4301E THN4301U THN4301Z |
SiGe NPN Transistor
|
AUK corp
|
|
