| PART |
Description |
Maker |
| N04L1630C2BT2 N04L1630C2B N04L1630C2BB2 N04L1630C2 |
256K X 16 STANDARD SRAM, 70 ns, PDSO44
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K 】 16 bit POWER SAVER TECHNOLOGY TM
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM
|
ON SEMICONDUCTOR
AMI[AMI SEMICONDUCTOR]
|
| N04L1630C2B |
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
| N04L163WC2A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04L63W1AB27I N04L63W1AB27IT N04L63W1AT27I N04L63W |
4 Mb Ultra-Low Power Asynchronous CMOS SRAM
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K 隆驴 16 bit
|
ON Semiconductor
|
| N04L163WC1AT2-70I N04L163WC1A N04L163WC1AB N04L163 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM
|
NANOAMP[NanoAmp Solutions, Inc.]
http://
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| ISL55290 ISL55290EVAL1Z ISL55290IUZ ISL55290IUZ-T1 |
Single and Dual Ultra-Low Noise, Ultra-Low Distortion, Low Power Op Amp
|
Intersil Corporation
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| 3150O-SERIES 3450O-SERIES 3551TPQ0 3551TPQ1 3551TP |
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Microprocessor Supervisory Reset Circuits with Edge-Triggered, One-Shot Manual Reset
Optoelectronic 光电
Ultra-Low-Power Voltage Detectors and µP Supervisory Circuits 光电
Evaluation System/Evaluation Kit for the MAX6660 光电
|
Rubycon, Corp.
Fairchild Semiconductor, Corp.
DB Lectro, Inc.
Cypress Semiconductor Corp.
RECOM Electronic GmbH
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| MAX6826 MAX6827 MAX6828 MAX6829 MAX6831 MAX6830 MA |
Vcc1: 3.3 V, Vcc2: 1.2 V, dual ultra-low-voltage mP supervisor with manual reset and watchdog timer
Vcc1: 3.3 V, Vcc2: 1.5 V, dual ultra-low-voltage mP supervisor with manual reset and watchdog timer
2.63 V, dual ultra-low-voltage mP supervisor with manual reset and watchdog timer
Dual Ultra-Low-Voltage SOT23 μP Supervisors with Manual Reset and Watchdog Timer
Dual Ultra-Low-Voltage SOT23 レP Supervisors with Manual Reset and Watchdog Timer
Dual Ultra-Low-Voltage SOT23 P Supervisors with Manual Reset and Watchdog Timer
低电压、双电源监控复位电路
From old datasheet system
16-Bit Shift Registers 28-LCCC -55 to 125
4-By-4 Register Files With 3-State Outputs 16-CDIP -55 to 125
2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6 SOT-23, 6 PIN
Dual, Ultra-Low-Voltage SOT23 µP Supervisors with Manual Reset and Watchdog Timer 2-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO6
2.32 V, dual ultra-low-voltage mP supervisor with manual reset and watchdog timer
Vcc1:1.8 V, Vcc2: 1.5 V, dual ultra-low-voltage mP supervisor with manual reset and watchdog timer
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM - Dallas Semiconductor
|
