PART |
Description |
Maker |
MX29F400CBMI-70G MX29F400CBTI-70G |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO44 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Macronix International Co., Ltd.
|
K5A3240YTC-T855 K5A3340YBC-T855 K5A3240YBC-T855 K5 |
SPECIALTY MEMORY CIRCUIT, PBGA69 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
http:// SAMSUNG SEMICONDUCTOR CO. LTD.
|
KM23V4000D |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM) 4分位512Kx8)的CMOS掩模ROM分位512Kx8)的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
KM23C4000DTY KM23C4000DETY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY29F400TT55 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
Hynix Semiconductor
|
K6T4016C3B-B K6T4016C3B-RB55 K6T4016C3B-RF10 K6T40 |
256Kx16 bit Low Power CMOS Static RAM
|
Samsung semiconductor
|
HT27C040 |
CMOS 512Kx8-Bit OTP EPROM
|
holtek
|
MX29F004T MX29F004TPC-12 |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
N04L163WC1C |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
K6T4008C1B-DB70 |
512Kx8 bit Low Power CMOS Static RAM
|
SAMSUNG
|
BS616LV4018 BS616LV4018EI BS616LV4018AC BS616LV401 |
Very Low Power/Voltage CMOS SRAM 256K X 16 bit 非常低功电压CMOS SRAM56 × 16 Asynchronous 4M(256Kx16) bits Static RAM From old datasheet system
|
Electronic Theatre Controls, Inc. Brilliance Semiconductor BSI ETC[ETC] List of Unclassifed Manufacturers
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