PART |
Description |
Maker |
IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc. ON Semiconductor
|
SSM3J01T |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
MTP5N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
MTP10N25 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
MRF1517T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
|
MRF8S26120HR3 MRF8S26120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
MAPLST1617-030CF |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MTP2N80 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTP15N05E |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conduct...
|