PART |
Description |
Maker |
M5M51008DFP M5M51008DFP-55H M5M51008DFP-70H M5M510 |
1048576位(131072 - Word-8-bit)的CMOS static RAM 1048576位(131072 - Word8位)的CMOS静态RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM Octal D-Type Transparent Latches With 3-State Outputs 20-SO -40 to 85
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HB561008AR-20 HB561008A-20 HB561008B-12 HB561008B- |
x8 Fast Page Mode DRAM Module 262114-word x 8 bit dynamic random access memory module 26214-word x 8-bit dynamic random access memory module 262锛?14-word x 8-bit dynamic random access memory module
|
Hitachi,Ltd.
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M5M28F101AFP |
1048576-BIT (131072-WORD BY 8-BIT) CMOS FLASH MEMORY
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
M5M51008CKR-70 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Sem...
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M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ-15 |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor
|
M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM From old datasheet system
|
Mitsubishi
|
M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
M5M5V216AWG M5M5V216AWG-70LW M5M5V216AWG-55H M5M5V |
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM 2097152位(131072字由16位)的CMOS静态RAM From old datasheet system
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http:// Mitsubishi Electric, Corp. Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HM628128LFP |
131072-word x 8-bit High Speed CMOS Static RAM
|
Hitachi Semiconductor
|
HN28F101SERIES 28F101 |
131072-word ′ 8-bit CMOS Flash Memory From old datasheet system
|
hitachi
|
TC55V1001F TC55V1001F-10 TC55V1001F-85 TC55V1001FT |
131,072 WORD BY 8 BIT STATIC RAM 131072 Word8位静态RAM
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Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
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NEC TOKIN America Inc. NEC TOKIN, Corp.
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