PART |
Description |
Maker |
FZ800R33KF1 FS150R12KF4 FD400R12KF4 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 3.3KV V(BR)CES | 800A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 150A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五(巴西)国际消费电子展|四楼一(c
|
Infineon Technologies AG
|
1DI300MN-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 600V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL SIPMOS垄莽 Power-Transistor SIPMOS庐 Power-Transistor SIPMOS? Power-Transistor SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
KD224575 |
Dual Darlington Transistor Module (75 Amperes/600 Volts) 75 A, 450 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
Powerex, Inc. POWEREX[Powerex Power Semiconductors]
|
1DI400A-120 |
POWER TRANSISTOR MODULE
|
http:// FUJI[Fuji Electric]
|
2DI150M-120 |
Power Transistor Module
|
Fuji Electric
|