| PART |
Description |
Maker |
| MB8117405B |
4M X 4-Nit Hyper Page Mode DRAM
|
Fujitsu
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
| MB8501E064AA-60L MB8501E064AA-70L |
1 M ×64 BIT
Hyper Page Mode DRAM SO-DIMM(CMOS 1 M ×64 位超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MB81V16165A-70L |
CMOS 1M ×16 BIT
Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB81V16165A-60L |
CMOS 1M ×16 Bit Hyper Page Mode Dynamic RAM(CMOS 1M ×16 位超级页存取模式动态RAM)
|
Fujitsu Limited
|
| MH16V6445BWJ-5 MH16V6445BWJ-6 |
HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16V6445B MH16V6445BWJ-6 MH16V6445BWJ-5 |
HYPER PAGE MODE 1073741824 - BIT ( 16777216 - WORD BY 64 - BIT ) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
MITSUBIAHI
|
| MH16V725BWJ-5 MH16V725BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH16V7245BWJ-5 MH16V7245BWJ-6 |
HYPER PAGE MODE 1207959552 - BIT ( 16777216 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
| MH8V7245BWZTJ-6 MH8V7245BWZTJ-5 |
HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MH8V725BAZTJ-6 MH8V725BAZTJ-5 |
HYPER PAGE MODE 603979776 - BIT ( 8388608 - WORD BY 72 - BIT ) DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
