PART |
Description |
Maker |
MGFS48B2122 |
2.11 - 2.17 GHz BAND 60W GaAs FET 21日至二月17号GHz频段60瓦砷化镓场效应管
|
NEC, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
MGFL48V1920 |
From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SHF-0189 SHF-0189Z |
C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HFET 0.05 - 6 GHz, 0.5 Watt GaAs HFET
|
SIRENZA MICRODEVICES INC List of Unclassifed Manufacturers ETC[ETC] SIRENZA[SIRENZA MICRODEVICES]
|
XD1004-BD-EV1 XD1004-BD-000V |
10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10000 MHz - 40000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 10.0-40.0 GHz GaAs MMIC Distributed Amplifier 10.0-40.0千兆赫的GaAs MMIC分布式放大器
|
Mimix Broadband, Inc.
|
MGFS52BN2122A |
2.1-2.2 GHz BAND 160W GaAs FET
|
Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
|
NE1069L-4B |
1.6-2.3 GHz, 4 W, L,S-band power GaAs MESFET
|
NEC
|
MGFC39V7785A |
7.7-8.5 GHz Band 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
MAAM02350 |
Wide Band GaAs MMIC Amplifier 0.2 - 3.0 GHz
|
M/A-COM Technology Solutions, Inc.
|
MGFC40V6472A |
6.4-7.2 GHz BAND 10W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
XP1022-QF-0N00 XP1022-QF-EV1 |
17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17000 MHz - 25000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 17.0-25.0 GHz GaAs MMIC Power Amplifier, QFN 17.0-25.0千兆赫的GaAs MMIC功率放大器,QFN封装
|
Mimix Broadband, Inc.
|