| PART |
Description |
Maker |
| MGFS45A2527B MGFS45A2527B11 |
2.5-2.7 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFC45V5964A_04 MGFC45V5964A MGFC45V5964A04 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04 |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V3436A |
3.4-3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7177B |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFX36V0717 X360717 |
10.7 - 11.7GHz BAND 4W INTERNALLY MATCHD GaAs FET 10.7 - 11.7GHz频段4瓦国内MATCHD砷化镓场效应
From old datasheet system
|
Rohm Co., Ltd.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SC5488A12 2SC5488A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single SSFP
VHF to UHF Wide-Band Low-Noise Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SC5226A 2SC5226A12 ENA1062A |
RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP
VHF to UHF Wide-Band Low-Noise Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
