| PART |
Description |
Maker |
| MGFC45B3436B |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58013U07 |
6GHz, 1:2 FANOUT BUFFER/TRANSLATOR w/400mV LVPECL OUTPUTS and INTERNAL INPUT TERMINATION 6GHz:2扇出缓冲翻译w/400mV LVPECL输出和内部输入终
|
Micrel Semiconductor, Inc.
|
| SY58020U_07 SY58020U SY58020UMG SY58020UMGTR SY580 |
6GHz, 1:4 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
MICREL[Micrel Semiconductor]
|
| SY58020UMITR SY58020UMI SY58020U |
6GHz 1:4 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
6GHZ, 1:4 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
Micrel Semiconductor,Inc.
MICREL INC
MICREL[Micrel Semiconductor]
|
| MGFC45V3436A_04 MGFC45V3436A MGFC45V3436A04 |
3.4 - 3.6GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM0203F2102806 |
Ceiling-mounted 3dBi Wide-band Antenna 700MHz to 6GHz
|
List of Unclassifed Manufacturers
|
| MGFS45B2527B |
2.5-2.7 GHz BAND / 30W
|
Mitsubishi Electric Semiconductor
|
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STK433-030-E |
2-channel class AB audio power IC, 30W 30W
|
Sanyo Semicon Device
|
| NES1821B-30 |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
NEC[NEC]
|
| MGA-545P8 MGA-545P8-TR2 MGA-545P8-TR2G |
50 MHz - 7000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
MGA-545P8 · Low Current 22dBm Medium Power Amplifier In LPCC2x2 for 5-6GHz systems
|
Agilent Technologies, Inc.
Agilent (Hewlett-Packard)
|
| 2450BM14G0011 2450BM14G0011S 2450BM14G0011T |
2.4GHz Impedance Matched Balun embedded FCC/ETSI Band Pass Filter For Texas Instruments CC2620, CC2630, CC2640, CC2650 chipsets operated on INTERNAL BIAS MODE
|
Johanson Technology Inc...
|
