| PART |
Description |
Maker |
| PA7006 |
3.8?.2GHz 10W 40dB SOLID STATE POWER AMPLIFIER
|
MTRONPTI
|
| 1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4
Diode Zener Single 25V 5% 10W 2-Pin DO-4
Diode Zener Single 9.1V 5% 10W 2-Pin DO-4
Diode Zener Single 30V 5% 10W 2-Pin DO-4
Diode Zener Single 16V 5% 10W 2-Pin DO-4
Diode Zener Single 7.5V 5% 10W 2-Pin DO-4
Diode Zener Single 24V 5% 10W 2-Pin DO-4
Diode Zener Single 175V 20% 10W 2-Pin DO-4
Diode Zener Single 50V 5% 10W 2-Pin DO-4
Diode Zener Single 43V 5% 10W 2-Pin DO-4
Diode Zener Single 56V 5% 10W 2-Pin DO-4
Diode Zener Single 13V 5% 10W 2-Pin DO-4
Diode Zener Single 8.2V 5% 10W 2-Pin DO-4
Diode Zener Single 15V 5% 10W 2-Pin DO-4
Diode Zener Single 27V 5% 10W 2-Pin DO-4
Diode Zener Single 18V 5% 10W 2-Pin DO-4
Diode Zener Single 105V 5% 10W 2-Pin DO-4
Diode Zener Single 52V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 5% 10W 2-Pin DO-4
Diode Zener Single 51V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
| MGFK38V2732 K382732 |
From old datasheet system
12.7~13.2GHZ BAND 6W INTERNALLY MATCHED GAAS FET
12.7-13.2GHz BAND 6W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY89833L SY89833LMITR SY89833LMI |
3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFC39V6472A04 MGFC39V6472A |
6.4 ~ 7.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742A |
3.7- 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| LC-FSLC-220SN-0405A FSLC-220SN |
3216 Size 2GHz Band Chip Multilayer Coupler
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V5964A C405964A |
5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V3742 |
3.7 - 4.2GHz BAND 16W INTERNALLY MATCHED GaAs FET 3.7 - 4.2GHz波段16周内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MGFC45V6472A C456472A |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
