| PART |
Description |
Maker |
| MA4VAT2007-1061T MA4VAT2007-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MA4VAT2004-1061T MA4VAT2004-1061T-15 |
High IIP3 PIN Diode Variable Attenuator 1.7 - 2.0 GHz
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| MV1402-5MCHIP MV1401B-4M MV1405B-2M MV1403-6MCHIP |
360 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
550 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-14
250 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
175 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
120 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
|
| ALM-38140-TR1G ALM-38140 ALM-38140-BLKG |
50MHz - 4GHz PIN Diode Variable Attenuator Module
|
AVAGO TECHNOLOGIES LIMITED
|
| AT10-0019-TB AT10-0019TR AT10-0019 |
PIN Diode Based Variable Attenuator, 50 - 1000 MHz
|
M/A-COM Technology Solutions, Inc.
|
| BM831 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer
|
BeRex Corporation
|
| BM831 BM831-18 |
0.7~1.4GHz High IIP3 GaAs MMIC Mixer with Integrated LO AMP
|
BeRex Corporation
|
| MMBV2104L MMBV2104LT1 MMBV2104LT3 |
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE CASE 318-07, 3 PIN
|
Motorola Mobility Holdings, Inc.
|
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| 1N445 1N316 1N440 1N547 1N535 1N539 1N536 1N533 1N |
GOLD BONDED GERMANIUM DIODES
Diode Zener Single 8.4V 5% 500mW 2-Pin DO-7
Diode Zener Single 68V 5% 1.5W 2-Pin DO-41
Diode Switching 400V 3A 2-Pin SOD-64 Ammo
Diode Zener Single 87V 5W 2-Pin DO-201AE
Diode Switching 75V 0.25A Automotive 2-Pin SOD-323 T/R
|
New Jersey Semiconductor
|
