PART |
Description |
Maker |
M29F04B45K1 M29F04B45K1E M29F04B45K1F M29F04B45K1T |
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29W040B70K1T M29W040B55NZ1T M29W040B55NZ6T |
4 Mbit 512Kb x8, Uniform Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
|
M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器 4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器 Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器 From old datasheet system 4 Mbit (512Kb x 8) OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
4376 M27V401 M27V401-200B1TR M27V401-200B6TR M27V4 |
4 Mbit 512Kb x8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 4兆位512KB的x8低压紫外线EPROM和检察官办公室存储器 2.5-V/3.3-V 32-Bit Buffers/Drivers With 3-State outputs 96-LFBGA -40 to 85 Quadruple 2-Input Positive-NAND Gates 14-SOIC 0 to 70 2.5-V/3.3-V 16-Bit Bus Transceiver With 3-State Outputs 48-TSSOP -40 to 85 4 Mbit (512Kb x8) Low Voltage UV EPROM and OTP EPROM From old datasheet system 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory 32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory 32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY 32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
27C4001 M27C4001 M27C4001-10B1 M27C4001-10B1TR M27 |
From old datasheet system 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM 4 Mbit 512Kb x 8 UV EPROM and OTP EPROM
|
ST Microelectronics STMicroelectronics
|
M29F800D M29F800DB M29F800DB55N1F M29F800DT90M6E - |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory 8兆(1兆x812KB的x16插槽,引导块V电源快闪记忆
|
ST Microelectronics STMicroelectronics N.V.
|
M48Z512A-85PM1 M48Z512AY-85PM1 M48Z512A-70PM1 |
4 MBIT (512KB X 8) ZEROPOWER SRAM
|
SGS Thomson Microelectronics
|
M29F010B M29F010B90 M29F010B90P1T 6545 29F010 |
1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory From old datasheet system 1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory 1 Mbit 128Kb x8 Uniform Block Single Supply Flash Memory 1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M59PW064 M59P064110N1T M59P064100M1T M59P064100N1T |
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory 64兆位Mb的x16插槽,统一座)3V电源LightFlash记忆 64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
M36W832TE8 M36W832TE M36W832BE70ZA6T M36W832BE70ZA |
32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product 32 Mbit 2Mb x16 Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM Multiple Memory Product
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STMICROELECTRONICS[STMicroelectronics]
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