| PART |
Description |
Maker |
| MGP4N60E-D |
Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| MTP5N40E |
N-Channel Enhancement-Mode Silicon Gate
|
New Jersey Semi-Conduct...
|
| MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
TRSYS
|
| MTP15N08EL |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
Motorola, Inc.
|
| SM703 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| LP701 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
