PART |
Description |
Maker |
D5050UK |
METAL GATE RF SILICON FET (GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 50V - 30MHz SINGLE ENDED)
|
TT electronics Semelab Limited Seme LAB
|
2SK3019 2SK3019TL |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset Transistors > MOS FET > Small Signal MOS FET
|
ROHM
|
D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D1017UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(150W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应150W-28V-175MHz,单端)) METAL GATE RF SILICON FET
|
Semelab(Magnatec) TT electronics Semelab Limited SEME-LAB[Seme LAB]
|
D1005 D1005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应80W-28V-175MHz,单端)) METAL GATE RF SILICON FET
|
TT electronics Semelab Limited Semelab PLC SEME-LAB[Seme LAB]
|
D1006UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应120W-28V-175MHz,单端)) METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
D2210UK D1231UK D2010 D2010UK |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
HD74CBT1G125 |
SINGLE FET BUS SWITCH
|
Renesas Electronics Corporation
|
MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc] Motorola, Inc.
|