| PART |
Description |
Maker |
| LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138DW1T1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
| LBSS138LT1 LBSS138LT1G |
Power MOSFET 200 mAmps, 50 Volts N-hannel SOT-3
|
乐山无线电股份有限公
|
| BSS138LT1 BSS138LT1G BSS138LT3G BSS138LT3 BSS138L |
Power MOSFET 200 mAmps, 50 Volts
Power MOSFET 200 mA, 50 V
|
ONSEMI[ON Semiconductor]
|
| VN2410L-D |
Small Signal MOSFET 200 mAmps, 240 Volts N-Channel TO-92
|
ON Semiconductor
|
| BS108ZL1 BS108/D BS108-D |
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level N-Channel TO-92
Fast Recovery Glass Passivated Rectifier Diodes
|
ON Semiconductor
|
| LBSS84LT1G LBSS84LT3G |
Power MOSFET F30 mAmps, 50 Volts
|
Leshan Radio Company
|
| BVSS123LT1G |
Power MOSFET 170 mAmps, 100 Volts
|
ON Semiconductor
|
| LBSS84WT1G |
Power MOSFET F30 mAmps, 50 Volts P_Channel SOT_323
|
乐山无线电股份有限公
|
| MMBF2201NT1G MMBF2201NT106 MMBF2201NT1 |
Power MOSFET 300 mAmps, 20 Volts N-Channel SC-70/SOT-323
|
ONSEMI[ON Semiconductor]
|
| MGSF1P02LT1 MGSF1P02LT3 MGSF1P02L MGSF1P02LT3G |
Power MOSFET 750 mAmps, 20 Volts P-Channel(750mA20V，P沟道增强型功率MOS场效应管)
|
ONSEMI[ON Semiconductor]
|
| IXFT74N20 IXFR90N20 IXFE24N100 |
HIPERFET POWER MOSFETs 74 A, 200 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268
90 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET ISOPLUS247, 3 PIN
Single MOSFET Die 22 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS, Corp.
|
|
