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KVR133X64C3Q128 - 128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 128MB6x位的PC133 CL3超薄168针DIMM

KVR133X64C3Q128_1261937.PDF Datasheet


 Full text search : 128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm 128MB6x位的PC133 CL3超薄168针DIMM


 Related Part Number
PART Description Maker
KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
512MB6x位的PC133 CL3超薄168针DIMM
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
KVR133X64C3/512 512Mb 64M x 64-Bit PC133 CL3 168-Pin DIMM Module
Kingston Technology
V436516R04VATG-75 3.3 VOLT 16M x 64 using 8M x 16 PC133 UNBUFFERED SDRAM MODULE
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
V436516S04VATG-75 3.3 VOLT 16M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE
MOSEL[Mosel Vitelic, Corp]
V437216S04VCTG-75 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 UNBUFFERED ECC SDRAM MODULE
MOSEL[Mosel Vitelic, Corp]
V437216C04VDTG-75 3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE
MOSEL[Mosel Vitelic, Corp]
UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
NEC, Corp.
NEC Corp.
NEC[NEC]
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
Infineon
SIEMENS[Siemens Semiconductor Group]
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
MBM29F016A-90PFTN MBM29F016A-90PFTR MBM29F016A-12 FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
Fujitsu Microelectronics
 
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KVR133X64C3Q128 display KVR133X64C3Q128 Audio KVR133X64C3Q128 igbt KVR133X64C3Q128 Resistor KVR133X64C3Q128 outputs
 

 

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