| PART |
Description |
Maker |
| KVR133X64C3L/128 |
128Mb 16M x 64-Bit PC133 CL3 Low Profile 168-Pin DIMM
|
Kingston Technology
|
| KVR133X64C3L512 KVR133X64C3L_512 KVR133X64C3L/512 |
512MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
512MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| KVR133X64C3SS128 KVR133X64C3SS_128 KVR133X64C3SS/1 |
128MB 16M x Bit PC133 CL3 Low Profile 168-Pin Dimm
128MB6x位的PC133 CL3超薄168针DIMM
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| KVR400X64C3AK2/1G |
1024MB 400MHz DDR Non-ECC CL3 (3-3-3) DIMM (Kit of 2) 1024MB00MHz的复员非ECC CL3-3-3）内存（2盒）
|
Ecliptek, Corp.
|
| V437216C04VDTG-75 V43716C04VDTG-75 |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE
3.3V 16M x 72 high performance PC133 register PLL ECC SDRAM module
|
Mosel Vitelic Corp
|
| V437216C04VDTG-75 |
3.3 VOLT 16M x 72 HIGH PERFORMANCE PC133 REGISTER PLL ECC SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| KVR133X64C2512 KVR133X64C2_512 KVR133X64C2/512 |
512MB 64M x 64-Bit PC133 CL2 Low Profile 168-Pin Dimm Module
|
Kingston Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYS72V16220GU HYS64V16220GU HYS64V8300GU HYS72V830 |
3.3 V 16M × 64-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 64-× 2列同步动态RAM模块)
3.3 V 16M × 72-Bit × 2 Bank同步动态DRAM Module(3.3 V 16M × 72-× 2列同步动态RAM模块)
3.3 V 8M × 64-Bit × 1 Bank同步动态DRAM Module(3.3 V 8M × 64-× 1列同步动态RAM模块) 3.3800万64位1行同步动态内存（3.38米64 -位1列同步动态内存模块）
|
SIEMENS AG
|
| K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位，8米16位NAND闪存
16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
