| PART |
Description |
Maker |
| 2SC2458 2SC2458L |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications
TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BC556B BC556 BC558B BC557B BC557C BC557A |
PNP Amplifier Transistor(集电发射极电45V，集电极-基极电压-50V的PNP放大器晶体管) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
Amplifier Transistors(PNP Silicon)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| KTC3878 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER/ HF/ VHF AMPLIFIER)
|
Korea Electronics (KEC)
|
| BD526 BD530 BD528 BD530-5 BD528-5 BD526-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V.
PNP silicon annular amplifier transistor. 10 W, 80 V.
PNP silicon annular amplifier transistor. 10 W, 100 V.
PNP SILICON AMPLIFIER TRANSISTORS 进步党硅晶体管放大器
|
MOTOROLA[Motorola, Inc]
Motorola Inc
Motorola Mobility Holdings, Inc.
|
| KTC3194 |
EPITAXIAL PLANAR NPN TRANSISTOR (HIGH FREQUENCY LOW NOISE AMPLIFIER, VHF BAND AMPLIFIER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA812 2SA812M6 2SA812M4 2SA812M5 2SA812M7 2SB812- |
Silicon transistor
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
AUDIO FREQUENCY/GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 100MA I(C) | SOT-346
|
NEC
|
| UPA827 UPA827TF UPA827TF-T1 PA827TF |
High-Frequecy Low-Noise Amplifier NPN Transistor(高频低噪声放大器NPN晶体
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC5179 THIN-TYPE SMALL MINI MOLD
|
NEC Corp.
|
| 2SA817A E000600 |
TRANSISTOR (DRIVER STAGE, VOLTAGE AMPLIFIER APPLICATIONS) 晶体管（驱动级，电压放大器应用）
TRANSISTOR (DRIVER STAGE/ VOLTAGE AMPLIFIER APPLICATIONS)
DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| ENA1125 |
NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Semicon Device
|
| 2SC3776 |
NPN Epitaxial Planar Silicon Transistor UHF Oscillator, Mixer, Low-Noise Amplifier, Wide-Band Amplifier Applications
|
SANYO
|
