| PART |
Description |
Maker |
| 2SD2162 2SD2162-AZ |
8 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC
|
| 2SD560 2SD560LB 2SD560MB |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁| 5A条一（c）| TO - 220AB现有
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220AB
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC, Corp.
NEC Corp.
|
| 2SD1588 |
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| 2SC5214 |
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
ETC
List of Unclassifed Manufacturers
|
| KSD261 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| 2SD389 |
LOW FREQUENCY POWER AMPLIFIER(NPN)
|
WS
WINGS[Wing Shing Computer Components]
|
| 310-025109-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025105-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-021 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 2SB544 2SD400 2SD400E 2SD400D 2SD400F 2SB544G 2SB5 |
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92VAR
Low-Frequency Power Amp, Electronic Governor Applications
Low-Frequency Power Amp Electronic Governor Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
