| PART |
Description |
Maker |
| HB52D328DC-A6B HB52D328DC-A6BL HB52D328DC-B HB52D3 |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword 隆驴 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M 隆驴 16 components) PC100 SDRAM
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 100 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC100 SDRAM
x64 SDRAM Module
|
Elpida Memory
|
| KVR100X64C3/128 |
100 Mhz SDRAM 168-pin PC100 DIMM Memory Module
|
Kingston Technology
|
| HB52R1289E2U-A6B HB52R1289E2U-B6B |
1 GB Registered SDRAM DIMM 128-Mword ? 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M ? 4 Components) PC100 SDRAM
1 GB Registered SDRAM DIMM 128-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 64 M × 4 Components) PC100 SDRAM
|
Elpida Memory
|
| HB52R329E22-A6F HB52R329E22-B6F HB52R329E22-F |
256 MB Registered SDRAM DIMM 32-Mword × 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M × 4 Components) PC100 SDRAM
256 MB Registered SDRAM DIMM 32-Mword 隆驴 72-bit, 100 MHz Memory Bus, 2-Bank Module (36 pcs of 16 M 隆驴 4 Components) PC100 SDRAM
|
Elpida Memory
|
| HB52D88GB-A6F HB52D88GB-A6FL HB52D88GB-B6F HB52D88 |
64 MB Unbuffered SDRAM Micro DIMM 8-Mword 垄楼 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 8 M 垄楼 16 components) PC100 SDRAM
64 MB Unbuffered SDRAM Micro DIMM 8-Mword ′ 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 8 M ′ 16 components) PC100 SDRAM
|
Elpida Memory
|
| HB52D48GB-A6F HB52D48GB-A6FL HB52D48GB-B6F HB52D48 |
32 MB Unbuffered SDRAM Micro DIMM 4-Mword 隆驴 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M 隆驴 16 components) PC100 SDRAM
32 MB Unbuffered SDRAM Micro DIMM 4-Mword × 64-bit, 100 MHz Memory Bus, 1-Bank Module (4 pcs of 4 M × 16 components) PC100 SDRAM
|
Elpida Memory
|
| M374S6453CTS-L7C M347S6453CTS-C1H M347S6453CTS-C1L |
64Mx72 SDRAM DIMM with ECC based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data sheet
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
M374S6453CTS PC133/PC100 Unbuffered SDRAM DIMM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| V43648S04V V43648S04VCTG-10PC |
3.3 VOLT 8M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V436516S04VTG-10PC |
3.3 VOLT 16M x 64 HIGH PERFORMANCE PC100 UNBUFFERED SDRAM MODULE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| GMM26416233ENTG |
16Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
| V43648Z04VTG |
3.3 Volt 8M x 64 High Performance 100 MHZ SDRAM Module with Unbuffered(3.3V 8M*64位高性能无缓冲器100MHZ的SDRAM模块) 3.300万64高性能100 MHz的内存模块，缓冲.3 64位高性能无缓冲器100MHZ输出的内存模块）
|
Mosel Vitelic, Corp.
|
