| PART |
Description |
Maker |
| K7J643682M-FECI30 K7J641882M K7J641882M-FC16 K7J64 |
72Mb M-die DDRII SRAM Specification
|
SAMSUNG[Samsung semiconductor]
|
| GS8640ZV18T-250I GS8640ZV18GT-167I GS8640ZV18T-300 |
72Mb NBT SRAMs
72Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| GS864436B-166I GS864472C-166 GS864418B-150I GS8644 |
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 7 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 1M X 72 CACHE SRAM, 7 ns, PBGA209
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 4M X 18 CACHE SRAM, 7.5 ns, PBGA119
4M x 18, 2M x 36, 1M x 72 72Mb S/DCD Sync Burst SRAMs 2M X 36 CACHE SRAM, 8.5 ns, PBGA119
|
GSI Technology, Inc.
|
| K7I163682B06 K7I161882B |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| K7K3236T2C K7K3218T2C |
1Mx36 & 2Mx18 DDRII CIO b2 SRAM
|
Samsung semiconductor
|
| GS8662D08E-250 GS8662D08E-200 GS8662D08GE-167I GS8 |
72Mb SigmaQuad-II Burst of 4 SRAM
|
GSI[GSI Technology]
|
| GS8662D08GE-200 GS8662D08GE-333I GS8662D08GE-250I |
72Mb SigmaQuad-II Burst of 4 SRAM
|
http://
GSI Technology
|
| GS8662T08E-300I GS8662T08E-167 GS8662T08GE-167 GS8 |
72Mb SigmaCIO DDR-II Burst of 2 SRAM
|
GSI[GSI Technology]
|
| UPD44164362F5-E60-EQ1 UPD44164082 UPD44164082F5-E4 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
| UPD44324082F5-E40-EQ2 UPD44324082F5-E50-EQ2 UPD443 |
36M-BIT DDRII SRAM 2-WORD BURST OPERATION
|
NEC[NEC]
|
