| PART |
Description |
Maker |
| K6T4016U3C K6T4016U3C-B K6T4016U3C-F K6T4016U3C-RB |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Surface Mount Resistors Thick Film Chip Resistors
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6X4016T3F K6X4016T3F-TQ85 K6X4016T3F-B K6X4016T3F |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM 256Kx16位低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| N04L163WC1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
NanoAmp Solutions
|
| N04M163WL1A |
4Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 256Kx16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM
256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM
ASYNCHRONOUS STATIC RAM, Low Power A.SRAM
70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu...
Fuji Electric Holdings Co., Ltd.
ICSI[Integrated Circuit Solution Inc]
|
| KM616FS4110ZI-10 KM616FS4110ZI-7 |
100ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
70ns; V(cc): -2 to 3V; 1W; 256K x 16-bit super low power and low voltage full CMOS static RAM
|
Samsung Electronic
|
| FMP1617DCX |
1M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1216AAX |
8M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| FMP1216ACX |
8M x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| CMP0417AA8-F70I CMP0417AA8-I |
256K x 16 bit Super Low Power and Low Voltage Full CMOS RAM
|
FIDELIX
|
| EM620FU16 |
128K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
