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41000 Z5246B 10920 BZT03C30 W921C844 AD862808 CFR10XSA AFR4A
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K5L5628JTM-DH18 - 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM

K5L5628JTM-DH18_1259215.PDF Datasheet


 Full text search : 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM


 Related Part Number
PART Description Maker
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
SAMSUNG[Samsung semiconductor]
MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX 16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
MCNIX[Macronix International]
MX23L25611 MX23L25611MC-12 23L25611-10 23L25611-12 256M-BIT (16M x 16 / 32M x 8) MASK ROM WITH PAGE MODE (SSOP ONLY)
MXIC
MCNIX[Macronix International]
K8D1716UBC-DC07 K8D1716UBC-DC08 K8D1716UBC-DI07 K8 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
http://
MB84VD2108XEM-70 E550306 MB84VD2109XEM-70PBS MB84V 16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
From old datasheet system
2-Stacked MCP
SPANSION[SPANSION]
Fujitsu
MT48LC16M16A2FG-7EITD MT48LC16M16A2P-75ITDTR 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 8 X 14 MM, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
Micron Technology, Inc.
K4S51323PF-MF90 K4S51323PF-MF75 K4S51323PF-MF1L K4 16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 LEAD FREE, FBGA-90
16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90 FBGA-90
4M x 32Bit x 4 Banks Mobile-SDRAM
From old datasheet system
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM
CAP 47UF 350V ELECT EB SMD
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 16M X 16 DDR DRAM, PBGA144
Specialty DRAMs - 256M (8Mx32) 200MHz
Specialty DRAMs - 256M (16Mx16) 200MHz
Specialty DRAMs - 256M (16Mx16) 250MHz
INFINEON TECHNOLOGIES AG
MB84VD21181-85-PBS MB84VD21181-85-PTS MB84VD21191- 16M ( x 8/ x 16) FLASH MEMORY & 4M ( x 8/ x 16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 4M(x8/x16) static RAM
Fujitsu Microelectronics
 
 Related keyword From Full Text Search System
K5L5628JTM-DH18 Semiconductors K5L5628JTM-DH18 技术参数 K5L5628JTM-DH18 cantherm K5L5628JTM-DH18 Serie K5L5628JTM-DH18 Drain
K5L5628JTM-DH18 EEprom K5L5628JTM-DH18 array K5L5628JTM-DH18 Capacitor K5L5628JTM-DH18 single K5L5628JTM-DH18 什么封装
 

 

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