PART |
Description |
Maker |
K4S510732B-TC1L K4S510732B-TC1H K4S510732B-TL1L K4 |
Stacked 512Mbit SDRAM 堆积512兆内
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
HYB18T512160AF-5 HYB18T512800AF-3.7 HYB18T512400AF |
512-Mbit DDR2 SDRAM 512Mbit Double Data Rate (DDR2) Component
|
Infineon Technologies A...
|
M39P0R8070E2 M39P0R8070E2ZADE M39P0R8070E2ZADF |
256 or 512Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 128 Mbit Low Power SDRAM, 1.8V supply, Multi-Chip Package
|
Numonyx B.V
|
HYB18T256161AFL25 |
256-Mbit x16 GDDR2 DRAM
|
Infineon
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
|
HY27USXXX HY27SS16121M HY27SSXXX HY27US08121M HY27 |
(HY27SSxxx) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512兆(64Mx8bit / 32Mx16bit)NAND闪存
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
K4Y50024UC K4Y50024UC-JCA2 K4Y50024UC-JCB3 K4Y5002 |
512Mbit XDR TM DRAM(C-die)
|
Samsung semiconductor
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
HYS64V4200GDL-7.5 HYS64V8220GDL HYS64V4200GDL-8-X |
x64 SDRAM Module 3.3 V SDRAM Modules(3.3 V 同步动态RAM模块) 3.3 V SDRAM Module(3.3 V SDRAM 模块) 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, ZMA144
|
SIEMENS AG INFINEON TECHNOLOGIES AG
|
HY27SS08121M HY27US16121M Y27US08121M |
Search --To HY27US081M (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
|
Hynix Semiconductor
|
HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM x64 SDRAM Module X64的内存模
|
Elpida Memory Vishay Intertechnology, Inc.
|