PART |
Description |
Maker |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
SAMSUNG[Samsung semiconductor]
|
K3S7V2000M-TC15 K3S7V2000M-TC12 K3S7V2000M-TC10 K3 |
64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM 6400位(4Mx16 / 2Mx32)同步MASKROM 2M X 32 MASK PROM, 6 ns, PDSO86
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36 512Kx16 bit Low Power Full CMOS Static RAM 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp. Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K5L5628JTM-DH18 K5L5628JBM K5L5628JBM-DH18 K5L5628 |
256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM
|
SAMSUNG[Samsung semiconductor]
|
K3S7V2000M-TC15 K3S7V2000M-TC20 K3S7V2000M-TC30 K3 |
2M x 32 Synchronous MASKROM Data Sheet 64M-Bit (4Mx16 /2Mx32) Synchronous MASKROM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HSD8M32B4-10 HSD8M32B4-10L HSD8M32B4-12 HSD8M32B4- |
Synchronous DRAM Module 32Mbyte ( 8M x 32-Bit ) 144pin SO-DIMM based on 4Mx16, 4Banks, 4K Ref., 3.3V
|
http:// Hanbit Electronics Co.,Ltd.
|
A63P0636E-4.2F A63P0636 A63P0636E A63P0636E-2.6 A6 |
1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米6位同步高的Burst计数器和流水线数据输出高速SRAM 1M X 36 Bit Synchronous High Speed SRAM with Burst Counter and Pipelined Data Output 100万米36位同步高的Burst计数器和流水线数据输出高速SRAM DIODE ZENER SINGLE 500mW 6Vz 20mA-Izt 0.05 5uA-Ir 3.5Vr DO35-GLASS 5K/REEL
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
KM23C64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100 2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100 DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL Sync SRAM - 2.5V 2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC Alliance Semiconductor ...
|
K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
KM732V789 |
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Semiconductor
|
K1B3216BDD |
2M x 16 bit Synchronous Burst Uni-Transistor CMOS RAM
|
Samsung Semiconductor
|