| PART |
Description |
Maker |
| GP801DDM18 |
Hi-Reliability Dual Switch Low VCESAT IGBT Module
|
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| PBSS5250T |
PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.
|
NXP Semiconductors N.V.
|
| IXGH41N60 41N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT
|
IXYS[IXYS Corporation]
|
| IXGH38N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| GA150TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-FastTM Speed IGBT
|
International Rectifier
Integrated Circuit Systems
|
| GA200TS60U |
HALF-BRIDGE IGBT INT-A-PAK Ultra-Fast Speed IGBT
|
IRF[International Rectifier]
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
| SGW6N60UFD SGW6N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
