| PART |
Description |
Maker |
| IXGT60N60 IXGH60N60 IXGK60N60 |
Ultra-Low VCE(sat) IGBT
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http://
IXYS[IXYS Corporation]
|
| PBSS2515M PBSS2515M315 |
15 V. 0.5 A NPN low VCEsat (BISS) transistor
15 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd
|
NXP SEMICONDUCTORS
Philips
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| MMIX1G120N120A3V1 |
Ultra-Low-Vsat PT IGBT for 3kHz Switching
|
IXYS Corporation
|
| IXGH38N60U1 |
Ultra-Low VCE(sat) IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXSM45N100 IXSH45N100 |
1000V IGBT with diode
IGBT Discretes: Low Saturation Voltage Types
Low VCE(sat) IGBT - Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| STGWA45HF60WDI STGW45HF60WDI |
45 A, 600 V ultra fast IGBT with low drop diode
|
http://
STMicroelectronics
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2PD2150 |
20 V, 3 A NPN low VCEsat transistor
20 V, 3 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
Philips Semiconductors
|
| SGS6N60UFD SGS6N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
Fairchild Semiconductor
|
