PART |
Description |
Maker |
10BF20 10BF80 10BF10 10BF40 10BF60 10BF100 10BF100 |
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AA, PLASTIC, SMB, 2 PIN, Signal Diode SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极 1000V 1A Ultra-Fast Discrete Diode in a SMB package 100V 1A Ultra-Fast Discrete Diode in a SMB package 200V 1A Ultra-Fast Discrete Diode in a SMB package 400V 1A Ultra-Fast Discrete Diode in a SMB package 600V 1A Ultra-Fast Discrete Diode in a SMB package 800V 1A Ultra-Fast Discrete Diode in a SMB package
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Vishay Semiconductors International Rectifier, Corp. IRF[International Rectifier]
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IRG4BC40F |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR(VCES和\u003d 600V电压的Vce(on)典\u003d 1.50V,@和VGE \u003d 15V的,集成电路\u003d 27A条)
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IRF[International Rectifier] International Rectifier, Corp.
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IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC 70 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A) 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
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IRF[International Rectifier]
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IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
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IRF[International Rectifier]
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IRG4BC20S |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A)
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IRF[International Rectifier]
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IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
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IRF[International Rectifier]
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STGW45HF60WD |
ultra fast IGB
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ST Microelectronics
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IRG4PSC71K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
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International Rectifier
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IRG4PC50S IRG4PC50SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TANSISTOR(Vces=600V, Vce(on)typ.=1.28V, @Vge=15V, Ic=41A) INSULATED GATE BIPOLAR TRANSISTOR
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IRF[International Rectifier]
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IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
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IRF[International Rectifier]
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8ETH06 8ETH06-1 8ETH06F 8ETH06FP 8ETH06S |
600V 8A HyperFast Discrete Diode in a D2-Pak (UltraFast) package 600V 8A Hyperfast Discrete Diode in a TO-220 FullPack package 600V 8A HyperFast Discrete Diode in a TO-262 package Hyperfast Rectifier
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IRF[International Rectifier]
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HFA35HB60SCS |
600V 22A Hi-Rel Ultra-Fast Discrete Diode in a TO-254AA package
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International Rectifier
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