| PART |
Description |
Maker |
| IRLML6302TRPBF IRLML6302PBF07 |
HEXFET? Power MOSFET
technology, Ultra Low On-Resistance, P-Channel MOSFET
generation v technology
|
International Rectifier
|
| IRF7304PBF IRF7304TRPBF |
Generation V Technology
HEXFET Power MOSFET
|
International Rectifier
|
| IRLML2803GPBF11 |
Generation V Technology, Ultra Low On-Resistance, N-Channel MOSFET
|
International Rectifier
|
| KRF7401 |
Generation V Technology Ultra Low On-Resistance N-Channel Mosfet
|
TY Semiconductor Co., Ltd
|
| IRLML5103PBF11 IRLML5103TRPBF |
Lead-Free, Fast Switching, Available in Tape and Reel
generation v technology
|
International Rectifier
|
| SGP10N60A SGW10N60A SGP10N60A09 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGP20N60 SGP20N6009 SGW20N60 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SGD04N60 SGP04N60 SGP04N6007 |
Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| IRF7389 IRF7389TR |
Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| SGP02N12007 SGP02N120 SGD02N120 SGI02N120 |
Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB06N60HS SKB06N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
