PART |
Description |
Maker |
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
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P4C1049L-70L36MB P4C1049-45JMB P4C1049-55JMB P4C10 |
HIGH SPEED 512K x 8 STATIC CMOS RAM 高速为512k × 8静态CMOS存储 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 20 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 35 ns, PDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 25 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, CDSO36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 45 ns, PDFP36 HIGH SPEED 512K x 8 STATIC CMOS RAM 512K X 8 STANDARD SRAM, 70 ns, PDFP36
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Pyramid Semiconductor Corporation Pyramid Semiconductor, Corp.
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GS8161E18BD-150 |
1M x 18, 512K x 36, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
GS88436B-133 GS88436B-133I GS88436B-150 GS88436B-1 |
512K x 18, 256K x 36 8Mb S/DCD Sync Burst SRAMs 512K X 18 CACHE SRAM, 8.5 ns, PBGA119
|
Electronic Theatre Controls, Inc. GSI Technology
|
GS8160V18AT-200I GS8160V18AT-300 GS8160V18AT-300I |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS8160F18BT-6.5 GS8160F18BT-5.5 GS8160F18BT-5.5I G |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS816136BD-250 GS816132BD-250 GS816136BT-250 GS816 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
http://
|
GS816118 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
List of Unclassifed Manufacturers
|
GS8160F18BT-7.5 |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI Technology
|
GS8161E3T-200 GS8161E18 GS8161E18D-133 GS8161E18D- |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
|
GSI[GSI Technology]
|
GS816118BD-200IV GS816136BD-200IV GS816118BGT-150I |
1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 512K X 36 CACHE SRAM, 6.5 ns, PBGA165 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PQFP100 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs 1M X 18 CACHE SRAM, 7.5 ns, PBGA165
|
GSI Technology, Inc.
|
CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100 18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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