PART |
Description |
Maker |
HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44 16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44 Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50 DB25PH 16兆位同步DRAM 16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group SIEMENS AG
|
HYB39S64160AT HYB39S64160BT HYB39S64160BT-7 |
64M SDRAM Component 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM(用于高速图形场合)) 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM(用于高速图形场合))
|
Infineon SIEMENS AG
|
IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|
Q67100-Q1844 Q67100-Q2800 HYB39S64160BT-7.5 HYB39S |
64-MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
HYB39S64800AT-10 HYB39S64800AT-8 HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS[Siemens Semiconductor Group]
|
HYB39S64400AT-8B HYB39S64160AT-8B HYB39S64800AT-8B |
64 MBit Synchronous DRAM
|
SIEMENS AG
|
IS42LS16800A-10TI IS42S81600A-7T IS42LS81600A-7TI |
Aluminum Electrolytic Capacitor; Capacitor Type:Computer Grade; Voltage Rating:350VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-40 C to 85 C; Capacitance:2400uF RoHS Compliant: Yes 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM 16Meg × 8Meg x16 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Circuit Solu... Integrated Silicon Solution, Inc. Intersil, Corp. Integrated Circuit Solution...
|
HYI39S512160A |
512-Mbit Synchronous DRAM
|
Qimonda
|
IS42S32400B-6BL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
http://
|
IS45S32400B-7TLA IS45S32400B-7TLA1 IS45S32400B-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
IS42S32400D-6BLI IS42S32400D-6B-TR IS42S32400D-6TL |
4Meg x 32 128-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会
|