| PART |
Description |
Maker |
| HM5264165FTT-75 HM5264805FTT-75 HM5264405FTT-75 HM |
64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword × 16-bit × 4-bank/2-Mword × 8-bit × 4-bank /4-Mword × 4-bit × 4-bank PC/133, PC/100 SDRAM
64M LVTTL interface SDRAM 133 MHz/100 MHz 1-Mword 隆驴 16-bit 隆驴 4-bank/2-Mword 隆驴 8-bit 隆驴 4-bank /4-Mword 隆驴 4-bit 隆驴 4-bank PC/133, PC/100 SDRAM
|
http://
Elpida Memory
|
| HM5212805FLTD-75 HM5212805FLTD-B60 HM5212805FTD-B6 |
128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM
|
HITACHI[Hitachi Semiconductor]
|
| HM5257165B HM5257165B-75 HM5257165B-A6 HM5257165BT |
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM
512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
|
ELPIDA[Elpida Memory]
|
| IBM13N64734HCA |
64M x 72 Two-Bank Unbuffered SDRAM Module(64M x 64 2组不带缓冲同步动态RAM模块) 64米72双行缓冲内存模组4米64 2组不带缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| KM432S2030CT-G7 KM432S2030CT-F10 KM432S2030CT-G6 K |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HB52F328DC-75BL |
256 MB Unbuffered SDRAM S.O.DIMM 32-Mword × 64-bit, 133 MHz Memory Bus, 2-Bank Module (8 pcs of 16 M × 16 components) PC133 SDRAM
x64 SDRAM Module X64的内存模
|
Elpida Memory
Vishay Intertechnology, Inc.
|
| KM416S8030BN-G/FH KM416S8030BN-G/FL |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128MbSDRAM的收缩的TSOP 200万16 × 4银行同步DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4 |
IR LED 950NM 18 DEG DOUBLE END
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| V54C3256164VBUC V54C3256164VBUT V54C3256164VBLT7PC |
256Mbit (16M x 16) SDRAM, LVTTL, low power, 8ns
LOW POWER 256Mbit SDRAM 3.3 VOLT, 54-BALL SOC BGA 54-PIN TSOPII 16M X 16
256Mbit (16M x 16) SDRAM, LVTTL, low power, 7ns
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| V54C3128164VBGA V54C3128804VBGA V54C3128 V54C31284 |
16Mbit x 8 SDRAM, 3.3V, LVTTL, 6ns
128Mbit SDRAM 3.3 VOLT, BGA PACKAGE
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
|
| GMM2649233ETG |
8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl
|
Hynix Semiconductor
|
