| PART |
Description |
Maker |
| UNR5227 |
Composite Device - Transistors with built-in Resistor
Silicon NPN epitaxial planar type
|
Panasonic
|
| RN1711JE RN1710JE |
Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
| FA1A4M-15 |
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD
|
Renesas Electronics Corporation
|
| UNR9212J UNR9216J UNR9215J UNR921VJ UN9210J UN9211 |
Silicon NPN epitaxial planer type
Composite Device - Transistors with built-in Resistor
|
PANASONIC[Panasonic Semiconductor]
|
| GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GA1L3Z GA1L3Z-T1 GA1L3Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
| GA1L4Z GA1L4Z-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| RN4962FE |
TOSHIBA Transistor Silicon NPN・PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
|
TOSHIBA[Toshiba Semiconductor]
|
