| PART |
Description |
Maker |
| BF1005S Q62702-F1665 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| BF1012S Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SA620DK SA620 |
Low voltage LNA mixer and VCO - 1GHz
Low voltage LNA, mixer and VCO - 1GHz
|
PHILIPS[Philips Semiconductors]
|
| SA601 |
Low voltage LNA and mixer - 1GHz
From old datasheet system
|
Philips
|
| SA611DK SA611 SA611_3 |
1 GHz low voltage LNA and mixer
From old datasheet system
1GHz low voltage LNA and mixer
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| SPIRIT1 |
Low data rate, low power sub-1GHZ transceiver
|
STMicroelectronics
|
| MAX708TESA MAX706T MAX708TCSA MAX708SEPA MAX708SMJ |
3V Voltage Monitoring, Low-Cost, ?? Supervisory Circuits
3V Voltage Monitoring, Low-Cost, レP Supervisory Circuits 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDIP8
103SR Series Unipolar Hall-Effect Digital Position Sensor with 15/32 in cylindrical stainless steel housing; two hex nuts; 1 m [39.4 in] jacketed cable; current sinking output; and Vdc supply voltage
3V Voltage Monitoring / Low-Cost / P Supervisory Circuits
3V Voltage Monitoring, Low-Cost, P Supervisory Circuits
3V VOLTAGE MONITORING, LOW-COST, ヌP SUPERVISORY CIRCUITS
3V Voltage Monitoring Low-Cost P Supervisory Circuits
3V Voltage Monitoring, Low-Cost, μP Supervisory Circuits
|
Maxim Integrated Produc...
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
http://
MAXIM - Dallas Semiconductor
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2221UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MAX4223 MAX4223ESA MAX4223EUT-T MAX4224EUT-T MAX42 |
1GHz, Low-Power, SOT23, Current Feedback Amplifiers with Shutdown
1GHz / Low-Power / SOT23 / Current-Feedback Amplifiers with Shutdown
1GHz, Low-Power, SOT23, Current-Feedback Amplifiers with Shutdown
|
MAXIM - Dallas Semiconductor
Maxim Integrated Products
|
