| PART |
Description |
Maker |
| FS50VSJ-03 |
Power MOSFETs: FS Series, Low Voltage, 30V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFH32N50Q IXFT32N50Q |
32 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET?/a> Power MOSFETs Q-Class
HiPerFET⑩ Power MOSFETs Q-Class
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
| IXFT12N100 IXFT10N100 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
From old datasheet system
|
IXYS[IXYS Corporation]
|
| FS30KMH-2 |
Power MOSFETs: FS Series, Low Voltage, 100V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Powerex Power Semiconductors
|
| FL16KM-6A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FL7KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| 2SK1861 |
Power MOSFETs / VR Series
|
Shindengen
|
| FS30KMJ-06F |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY6BGH-02F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FY5AEJ-03 |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
