| PART |
Description |
Maker |
| IXFH14N100Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr
|
IXYS[IXYS Corporation]
|
| FS70UMJ-06 |
Power MOSFETs: FS Series, Low Voltage, 60V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FS50SMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| FS50VSJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXFR26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs ISOPLUS247 Q-CLASS
|
IXYS Corporation
|
| FS50KMJ-06F |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS4KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY3ACJ-03F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
