| PART |
Description |
Maker |
| STB6NC80 STB6NC80Z STB6NC80Z-1 STP6NC80ZFP STP6NC8 |
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/D?PAK/I?PAK Zener-Protected PowerMESH⑩III MOSFET N沟道800V 1.5ohm - 5.4A TO-220/FP/D?巴基斯我?巴基斯坦齐保护的PowerMESH⑩三MOSFET
5.4 A, 800 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IRFIBE20G |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)
GT 19C 19#12 SKT RECP BOX
|
IRF[International Rectifier]
|
| STU9NC80Z STU9NC80ZI STU9NC80 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH⑩III MOSFET
N-CHANNEL 800V - 0.82ohm - 8.6A Max220/I-Max220 Zener-Protected PowerMESH?III MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB12NK80Z-S |
N-CHANNEL 800V - 0.65ohm - 10.5A I2SPAK Zener-Protected SuperMESH Power MOSFET N沟道800V 0.65ohm - 10.5A I2SPAK齐保护的SuperMESH功率MOSFET
N-CHANNEL MOSFET with FAST DIODE
N-CHANNEL 800V - 0.65 OHM - 10.5A I2SPAK ZENER-PROTECTED SUPERMESH™ MOSFET
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
| STB6NC80Z-1 STB6NC80ZT4 STP6NC80ZFP |
N-CHANNEL 800V 1.5OHM 5.4A TO-220/TO-220FP/D2PAK/I2PAK/ ZENER-PROTECTED POWERMESH III MOSFET
N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener-Protected PowerMESHIII MOSFET
|
ST Microelectronics
|
| FQB2N80 FQI2N80 FQB2N80TM FQI2N80TU |
800V N-Channel QFET
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| P5NK80Z STP5NK80Z P5NK80ZFP STP5NK80ZFP |
N-channel 800V - 1.9- 4.3A - TO-220/TO-220FP Zener-protected SuperMESHPower MOSFET
N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET
N-channel 800V - 1.9ヘ - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH⑩ Power MOSFET
|
意法半导
STMicroelectronics
|
| HCF4000 HCF4000B HCF4001 HCF4001B HCF4002 HCF4002B |
NOR GATE
(289.19 k)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,6A I(D),TO-3 RoHS Compliant: Yes
T-PNP-SI-AF PO- .75W
T-NPN- SI-PO & SW-PD 40 W 或非
MOSFET-PWR N-CH HI SPEED 或非
MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:10.5A; On-Resistance, Rds(on):0.3ohm; Package/Case:3-TO-220; Continuous Drain Current - 100 Deg C:7.5A; Continuous Drain Current - 25 Deg C:10.5A 或非
MOSFET-PWR 800V 4A 或非
NOR GATE 或非
MOSFET-PWR 500V 8A
|
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| W7NB80 STW7NB80 |
N-CHANNEL MOSFET
N-CHANNEL 800V - 1.6ohm - 6.5A - TO-247 PowerMESH MOSFET
|
ST Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
