| PART |
Description |
Maker |
| 2SC4710LS 0929 |
NPN Triple Diffused Planar Silicon Transistor 2100V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4633LS |
NPN Triple Diffused Planar Silicon Transistor 1200V / 30mA High-Voltage Amplifier, High-Voltage Switching Applications
1200V/30mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| 2SC4636LS |
NPN Triple Diffused Planar Silicon Transistor 1800V / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
1800V/10mA High-Voltage Amplifier,High-Voltage Switching Applications
|
Sanyo Semicon Device
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2SC4493 |
NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
|
SANYO
|
| 2SC3646 |
High-Voltage Switching Applications
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC3645 |
High-Voltage Switching Applications
Adoption of FBET Process High Breakdown Voltage (VCEO = 160V)
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SC4256 |
NPN Triple Diffused Planar Silicon Transistor 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications
|
Sanyo
|
| 2SC5466 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. DYNAMIC FOCUS, HIGH VOLTAGE SWITCHING AND HIGH VOLTAGE AMPLIFIER APPLICATIONS.
|
TOSHIBA
|
| PS2703-1-F3-A PS2703-1-F3-K-A PS2703-1-F3-L-A PS27 |
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER
|
Duracell
California Eastern Labs
|
| PS2703-1-V-A PS2703-1-A PS2703-1-V PS2703-1 |
HIGH ISOLATION VOLTAGE HIGH COLLECTOR TO EMITTER VOLTAGE TYPE SOP MULTI PHOTOCOUPLER
|
CEL[California Eastern Labs]
|
