| PART |
Description |
Maker |
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| GBL210 GBL208 |
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
|
乐山无线电股份有限公
|
| D4SB80 D4SB10 D4SB100 D4SB20 D4SB40 D4SB60 |
Maximum Ratings & Thermal Characteristics Ratings at 25?/a> ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
|
LRC[Leshan Radio Company]
|
| EP3C25F256I7N EP3C25Q240C8N EP3C10E144C7 EP3C10F25 |
1. Cyclone III Device Datasheet
The following sections provide information about the absolute maximum ratings, recommended operating conditions, DC characteristics, and other specifications for Cyclone IIIdevices
This chapterdescribes the electric characteristics, switching characteristics,and I/O timing for Cyclone III devices. A glossary is also included for your reference
This chapter describes the electric characteristics, switching characteristics, and I/O timing for Cyclone? III devices. A glossary is also included for your reference.
|
Altera Corporation
|
| 1MBH10D-120 |
Ratings and characteristics of Fuji IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| 1MBH75D-060S 1MBH75D-060 FUJIELECTRICCOLTD-1MBH75D |
Ratings and characteristics of Fuji IGBT
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ERW03-060 |
Ratings and characteristics of Fuji silicon diode
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| ERW12-120 |
Ratings and characteristics of Fuji silicon diode
|
FUJI[Fuji Electric]
|
| SLF7032T-4R7M1R7-2-PF |
L-Q Frequency Characteristics DC Bias & Temperature Characteristics Temperature Characteristics Temperature Rise
|
TDK Electronics
|
| KF4N80F |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
MORNSUN Science& Technology Ltd.
|
| BB3P100M15 BB3P100M57 BB3P100M9 BB3P100M6 BB3P100M |
Compact Modular Fuse Holders With the Industry’s Best Ratings
Compact Modular Fuse Holders With the Industrys Best Ratings
Compact Modular Fuse Holders With the Industry’s Best Ratings
|
Cooper Bussmann, Inc.
|
| NSH03A15 |
Maximum Ratings
|
NIHON DEMPA KOGYO
|
