PART |
Description |
Maker |
EM39LV010-90Y EM39LV010 EM39LV010-45RD EM39LV010-4 |
1M Bits (128Kx8) Flash Memory
|
EMC[ELAN Microelectronics Corp]
|
TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
TOSHIBA
|
TC58FVM6T2AXB65 TC58FVM6T2AFT65 TC58FVM6B2AXB65 TC |
64MBIT (8Mx8 BITS/4Mx16 BITS) CMOS FLASH MEMORY TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 东芝马鞍山数字集成电路硅栅CMOS
|
Toshiba Corporation Toshiba, Corp.
|
LE28FV4001M LE28FV4001R LE28FV4001R-20 LE28FV4001R |
4MEG (524288words x 8bit) flash memory 4MEG (52488 x 8 Bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
|
K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
EM39LV040 EM39LV040-45RFDC EM39LV040-45RFDI EM39LV |
4M (512KX8) BITS FLASH MEMORY
|
EMC[ELAN Microelectronics Corp]
|
WMF128K8-120DEM5 WMF128K8-120FEM5 WMF128K8-120FFC5 |
150ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 120ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 EEPROM EEPROM EEPROM|FLASH|128KX8|CMOS|DIP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |双酯| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|LLCC|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | LLCC | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|FP|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS |计划生育| 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOJ|32PIN|CERAMIC 的EEPROM | FLASH动画| 128KX8 |的CMOS | SOJ | 32脚|陶瓷 EEPROM|FLASH|128KX8|CMOS|SOP|32PIN|CERAMIC 60ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 70ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690 90ns; 5V power supply; 128K x 8 monolitihic flash, SMD 5962-96690
|
White Electronic Designs Mosel Vitelic, Corp. International Rectifier, Corp. TE Connectivity, Ltd. KODENSHI, CORP. Microchip Technology, Inc. Century Container
|
K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G |
256M x 8 Bits NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K9T1G08U0M |
128M x 8 Bits NAND Flash Memory
|
http://
|
K9F1208R0C |
64M x 8 Bits NAND Flash Memory
|
Samsung semiconductor
|
TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭 TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd. Intel, Corp. Intel Corp. Intel Corporation
|
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 |
120ns 2M-bit CMOS flash memory 90ns 2M-bit CMOS flash memory 70ns 2M-bit CMOS flash memory 1 Megabit CMOS Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http:// CATALYST[Catalyst Semiconductor]
|